All sorts of organic material can be etched in plasma etching. The etching effect hereby is based on the same chemical reactions as the cleaning effect. Only the treatment
parameters, as p. e. time and output power, must be adjusted in correspondence to the requirements. In addition to oxygen other gases can be used which increase the etching
rate significantly. In most cases fluoridated gases as CF4 are used. The fluor radicals created in these
processes are much more reactive, but their reaction products have to be cleaned afterwards.
The plasma treatment in comparison to the conventional bathing procedures is characterized by the very low input of chemicals. Furthermore the chemicals used are harmless
(p. ex. oxygen, nitrogen, or CF4), easily available and cheap. There are no significant expenses for labour
security or disposal. The energy to expend is relatively low and a drying of the workpieces is not necessary, because it is all about a dry chemical process.
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Application areas:
•Semiconductor industry
•Printed board industry
•Microelectronics |
